发明名称 SEMICONDUCTOR SUBSTRATE AND SEMICONDUCTOR DEVICE USING THIS
摘要 PROBLEM TO BE SOLVED: To simplify wire bonding by a method wherein a heat-resisting resin film for protecting a monolithic integrated circuit region part and conductor leads coats the surface of the other part except respective external connection terminal lands of a silicon wafer. SOLUTION: A prescribed treatment is performed on a silicon wafer 11 to form a monolithic integrated circuit region part 11, which is incorporated with an active circuit comprising a resistor and a capacitor and a passive circuit comprising a transistor, and a conductor lead circuit, which consists of a plurality of external connection terminal lands 12 and a plurality of conductor leads 13 which couple these lands 12 with electrode pads of the region part 11, from the wafer 16. A heat-resisting resin film 14 for protecting the region part 11 and the leads 13 is formed by coating the surface of the other part except the respective lands 12 of the wafer 16. Thereby, a wire bonding can be simplified and reduction in the manufacturing cost of a semiconductor device can be contrived.
申请公布号 JPH09283553(A) 申请公布日期 1997.10.31
申请号 JP19960114122 申请日期 1996.04.10
申请人 MITSUI HIGH TEC INC 发明人 MITSUI TAKAAKI;NAGATA SATOSHI
分类号 H01L21/60;H01L21/82 主分类号 H01L21/60
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