发明名称 CLEANING AND STRIPPING OF PHOTORESIST FROM SURFACES OF SEMICONDUCTOR WAFERS
摘要 <p>In a microwave downstream process, a microwave plasma is formed from a gas that has a small quantity of fluorine to enhance ashing without substantial oxide loss. This process can be performed before or after other microwave downstream processes or reactive ion etching processes.</p>
申请公布号 WO1997040423(A2) 申请公布日期 1997.10.30
申请号 US1997006691 申请日期 1997.04.23
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