Verfahren zur Herstellung von BiMOS-Schaltungen mit hoher Leistung,申请号DE1990630225T-传众专利搜索

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发明名称	Verfahren zur Herstellung von BiMOS-Schaltungen mit hoher Leistung
摘要
申请公布号	DE69030225(T2)	申请公布日期	1997.10.30
申请号	DE1990630225T	申请日期	1990.09.07
申请人	NATIONAL SEMICONDUCTOR CORP., SANTA CLARA, CALIF., US	发明人	LAGE, CRAIG S., PUYALLUP, WASHINGTON 98372, US;SMALL, JAMES E., PUYALLUP, WASHINGTON 98374, US;BASTANI, BAMDAD, DANVILLE, CA 94526, US
分类号	H01L21/02;H01L21/033;H01L21/74;H01L21/8222;H01L21/8249;H01L27/06;H01L27/10;(IPC1-7):H01L21/82;H01L21/320	主分类号	H01L21/02
代理机构		代理人
主权项
地址

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