发明名称 Power semiconductor module with e.g. multiple semiconductor IGBT in bridge circuit
摘要 <p>The module includes control circuits in a common housing with a metal base and main circuit section, containing a bridge circuit element, e.g. each being a switch element and a freewheeling diode, as chips on a ceramic insulator. The chips are thermally coupled to the metal base with coupling lines, to which the element are linked. In the control circuit section is located a wiring substrate for the element control circuits, with wiring lines located on an insulator platelet. The main circuit section and the control circuit one are coupled by bonding devices. From the coupling lines of the main circuit section lead input and output terminals of the bridge circuit. From the wiring lines lead control circuit coupling terminals to be connected to external apparatus.</p>
申请公布号 DE19713656(A1) 申请公布日期 1997.10.30
申请号 DE1997113656 申请日期 1997.04.02
申请人 FUJI ELECTRIC CO., LTD., KAWASAKI, KANAGAWA, JP 发明人 TERASAWA, NORIHO, KAWASAKI, KANAGAWA, JP
分类号 H01L25/07;H01L25/16;H01L25/18;H01L27/04;H01L27/088;H01L29/739;H01L29/78;(IPC1-7):H01L25/04;H01L23/12 主分类号 H01L25/07
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