发明名称 Semiconductor devices with optimized hydrogen content and methods for their manufacture
摘要 A semiconductor device which includes a layer of hydrogenated semiconductor alloy material has the hydrogen content of that semiconductor layer optimized by the inclusion of a hydrogen-rich body of reservoir material in the device. Migration of hydrogen from the reservoir to the semiconductor layer provides and maintains an optimum hydrogen content in the semiconductor layer.
申请公布号 AU1779497(A) 申请公布日期 1997.10.30
申请号 AU19970017794 申请日期 1997.04.08
申请人 UNITED SOLAR SYSTEMS CORPORATION 发明人 SUBHENDU GUHA
分类号 H01L31/0392;H01L31/075 主分类号 H01L31/0392
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