| 摘要 |
<p>In a ferroelectric storage device, the influences of lower electrodes (111a and 111b) constituting ferroelectric capacitors (110a1-110a3 and 110b1-110b3) and the thermal stresses of the electrodes (111a and 111b) on a ferroelectric layer (113) formed on the electrodes (111a and 111b) can be relieved and, as a result, the disconnection of wires (106a1, 106a2, etc.) connected to the elect rodes (111a and 111b) due to the thermal stresses of the electrodes (111a and 111b) or the characteristic fluctuation or variation of the ferroelectric capacitors (110a1-110a3 and 110b1-110b3) due to the thermal stresses of the electrodes (111a and 111b) applied to the ferroelectric layer (113) are suppressed. The electrodes (111a and 111b) are bent at a plurality of points so that the electrodes can have zigzag planar shapes and divided into pluralities of wiring sections (111a1 and 111a2 and 111b1 and 111b2).</p> |
