摘要 |
<p>PCT No. PCT/KR96/00192 Sec. 371 Date Jul. 2, 1997 Sec. 102(e) Date Jul. 2, 1997 PCT Filed Nov. 2, 1996 PCT Pub. No. WO97/16580 PCT Pub. Date May 9, 1997The present invention relates to a method for forming substantially hydrogen free DLC layers, wherein DLC layer of thickness about 1 to 100 nanometers is deposited over a sample substrate or a field emitter array and subsequently exposed to etching plasma comprising fluorine gas, wherein during the latter step, hydrogen contained in the substrate is eliminated by chemical etching reaction with fluorine, wherein steps to form the hydrogen free DLC layer can be repeated to obtain a predetermined thickness of a DLC film.</p> |