| 摘要 |
A high power surge arrester device, the silicon cylinders of which consist of monocrystalline silicon conductors and leading discharge layers between them; on both ends of the silicon cylinders there are provided metal caps covering and supporting the silicon cylinders, electrodes packaged on both ends of the glass tube which is filled with inert gas contact with the metal caps, and the interval between end edges of the two metal caps is 0.5 SIMILAR 1.5mm. This surge arrester, the discharge property of which is stable and identical, can be produced by ripe production technology of semiconductor elements, and its production cost is low. |
