| 摘要 |
PURPOSE:To obtain photo-detecting and amplifying functions at a high speed by composing a PIN junction photodiode in which second and first semiconductor layers are used as active and electrode layers and a p-n junction field effect transistor in which a first semiconductor layer is used as an active layer. CONSTITUTION:A semiconductor layer 17 in which semiconductor layer 15 having an n-type in a lower part on a semiconductor layer 14 and made of InGaAs and a semiconductor layer 16 having an n-type and larger forbidden band width than that of a semiconductor layer 12 and made of InP are sequentially laminated is formed in a mesa shape. A pin junction photodiode D in which the layer 17 is used as an active layer, the layer 14 is used as an electrode layer, and electrodes 41, 42 are used as anode and cathode electrodes by the layers 17, 14, a semiconductor region 21 and the electrodes 41, 42 is composed. A p-n junction field effect transistor T in which the layer 15 is used as an active layer, electrodes 42, 42 and 44 are used as source, drain and gate electrodes by the layer 15, a region 22 and the electrodes 42-44 is composed. |
