发明名称 |
Manufacturing method of a light emitting device |
摘要 |
<p>A light emitting device includes a cladding layer composed of a III-V group nitride system semiconductor of a first conductivity type, an active layer formed on the cladding layer of the first conductivity type and composed of a III-V group nitride system semiconductor containing In, an undoped cap layer formed on the active layer and composed of a III-V group nitride system semiconductor, and a cladding layer formed on the cap layer and composed of a III-V group nitride system semiconductor of a second conductivity type. <IMAGE></p> |
申请公布号 |
EP0803916(A2) |
申请公布日期 |
1997.10.29 |
申请号 |
EP19970302374 |
申请日期 |
1997.04.07 |
申请人 |
SANYO ELECTRIC CO. LTD |
发明人 |
KUNISATO, TATSUYA;MATSUSHITA, YASUHIKO;KANO, TAKASHI;YAGI, KATSUMI;UEDA, YASHIRO |
分类号 |
H01L33/00;H01L33/06;H01L33/12;H01L33/32;H01L33/34;H01S5/00;H01S5/323;H01S5/343;(IPC1-7):H01L33/00;H01S5/32 |
主分类号 |
H01L33/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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