PLASMA CVD APPARATUS AND FORMATION OF DEPOSITED FILM BY PLASMA CVD

摘要

PROBLEM TO BE SOLVED: To provide a plasma CVD apparatus capable of forming high-quality deposited films having the film thicknesses extremely uniform with respect to the axial direction and circumferential direction of plural cylindrical substrates and having homogeneous film quality at a high speed on the surfaces of these cylindrical substrates and efficiently forming semiconductor devices. SOLUTION: This plasma CVD apparatus forms the deposited films on the substrates held by substrate holding means 105A by supplying the high-frequency electric power generated by a high-frequency power source to a cathode electrode 103 and generating plasma between the substrates and this cathode electrode 103. This method forms the deposited films by the plasma CVD. In the apparatus and method described above, the cathode electrode 103 has a bar shape and is provided with the mismatching points where the characteristic impedance of the high-frequency transmission line of the cathode electrode changes from small to large toward the progressing direction of the incident waves of the high frequency a >=1 points on the cathode electrode in contact with the plasma.