| 摘要 |
An integrated circuit and method for using same is constructed on a semiconductor substrate (15) with a structure (24) in the substrate (15) having an electrical value desired to be trimable and with a conducting layer (33) on the substrate (15) insulated (30) from the structure (14) except at one location (26), which is electrically connected to a first part of the structure (24). An oxide layer (48) separates one portion of the structure (24) from a part of the conductor (33). The second oxide layer (48) has a predetermined breakdown voltage such that when a voltage, VTRIM, larger than the second predetermined breakdown voltage is applied between the conductor (33) and the structure (24), the second oxide layer (48) breaks down, shorting the first and second parts (46, 50) of the structure (24) to trim its value.
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