VAPOR PHASE GROWING OF III-V COMPOUND SEMICONDUCTOR

摘要

PROBLEM TO BE SOLVED: To improve utilization efficiency of a V group raw material and decrease consumption and stabilize decomposition efficiency by simple remodeling of the device by arranging a catalyst on upstream side than a substrate based on flow direction of a raw material gas. SOLUTION: In growing e.g. GaN (or AlN) crystal of a III-V compound semiconductor by a device for Metal Organic Chemical Vapour Deposition(MOCVD), a susceptor 3 made of graphite is installed in a reacting furnace 1 made of a quartz and a catalyst 5 is installed in the upper stream part of the susceptor 3. GaN grown by about 3μm length on a sapphire substrate of 10mm×20mm is used as the catalyst 5 and the catalyst is embedded so that the surface of the susceptor 3 becomes smooth in a state in which GaN face is kept upward. The susceptor 3 is heated by an induction heat coil 2 and the catalyst 5 is simultaneously heated and ammonia flow rate of the V group raw material is set 3.0 to 1.5l/min to grow transparent GaN crystal.