发明名称 METHOD FOR FORMING CARBONACEOUS THIN FILM
摘要 PROBLEM TO BE SOLVED: To provide a method for forming a carbonaceous thin film having high quality stability and high productivity. SOLUTION: A carbonaceous thin film is formed by sputtering a carbon target on a substrate in the presence of a gas containing hydrogen atoms, a gas containing nitrogen atoms or a mixture of these and an inert gas in a film forming device. After carbonaceous thin films are formed for specified times, supplying of the gas containing hydrogen atoms, gas containing nitrogen atoms or mixture gas is stopped without releasing the film forming device to air. Then an oxygen gas of a specified concn. is supplied in a specified time and then the forming process of the carbonaceous thin film is started again.
申请公布号 JPH09279335(A) 申请公布日期 1997.10.28
申请号 JP19960095271 申请日期 1996.04.17
申请人 MITSUBISHI CHEM CORP 发明人 NAGAOKA TORU;NOGAWA NORIKAZU
分类号 C01B31/02;C23C14/06;C23C14/34;G11B5/84 主分类号 C01B31/02
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