| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for obtaining SiC ceramics sintered with addition of sintering auxiliaries that have ground surfaces of extremely low porosity even after being subjected to a further HIP process. SOLUTION: This SiC sintered compact is obtained by a method that molds SiC powder to which sintering auxiliaries have been added, and sinters the molding in an inert-gas atmosphere under normal or higher pressure, on conditions that the sintering auxiliaries are MgAl2 O4 and Y2 O3 powder, respectively, in a quantity of 2-15wt.%; that the molding is buried in SiC powder or its powdery mixture with MgAl2 O4 and/or Y2 O3 powder, or that the SiC powder mixed with MgAl2 O4 and/or Y2 O3 powder is arranged around the molding; that the molding is sintered at temperature of 1600-1900 deg.C; and that the sintered compact is subjected to the HIP process at temperature of 1500-1800 deg.C under pressure of at least 1600kg/cm<2> . |
