| 摘要 |
PURPOSE:To perform operation at great speed, by reducing or extinguishing an electrostatic capacity and a current which are caused by non active parts of a transistor. CONSTITUTION:Non-active parts are removed at emitter and collector layers 6 and 3 but they are left at a base layer 5. A base electrode 8 is formed at the above non active parts and etching stop layers 4 and 2 are provided at upper and lower parts of the collector layer 3. Leakage current components are distinguished by removing the non active parts and electrostatic capacity components decrease in proportion to reciprocals of relative dielectric constant. This makes it possible to operate at great speed. Further, the collector layer 3 is etched selectively with high accuracy by providing etching stop layers 4 and 2 and elements having desired characteristics are manufactured in such a manner that they are excellently reproducible. |
