MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE FOR OBTAINING MASK PROCESSOR MARGIN OF CAPACITOR

摘要

A fabrication method of stacked capacitors is provided to achieve high capacitance using an etching selectivity of silicon oxide and silicon nitride. The method comprises the steps of: forming a trench by selectively etching a first insulator(5) having MOS transistor to expose a source electrode(6A); depositing a first stack electrode(8); exposing a drain electrode(6B) by etching an interlayer insulator(10); forming a bit-line(11) connected to the exposed drain electrode(6B); forming multi-layer(30) alternately stacked of insulators and conductors; forming a contact hole to expose the first stack electrode(8); and filled a conductive layer(19) in the contact hole for electively connected each multi-layers(30). The bit-line(11) is formed before the stacked electorde is formed, thereby achieving high capacitance.