METHOD OF FABRICATING AN INTERCONNECT STRUCTURE COMPRISING LAMINATION OF A POROUS DIELECTRIC MEMBRANE

摘要

An integrated circuit element is provided, which may be an active or passive element, including a planar dielectric layer (12) laminated to the surface of conductive lines (15) and the semiconductor substrate (11) having a thickness of 5 micrometers, or less, and a dielectric constant less than 3.4. The dielectric layer (12) is preferably a fluoropolymer film coated or impregnated with a low ionic content resin. The preferred fluoropolymer film is expanded polytetrafluoroethylene and the preferred resin component is a low ionic content polymer having a low dielectric constant, high thermal stability, and low thermal expansion.