Semiconductor device with ionic bombard- - ment stage during manufacture

摘要

Over a part of the surface of the semiconductor substrate a metal film is applied and this is bombarded selectively with ions from a gas discharge of an inert gas such as Ar or Kr so that atoms are implanted, due to the energy transmission, from one of the elements in the metal film into the semiconductor surface zone in the area desired. The intimate bond so formed may be an ohmic or a rectifying contact. A variety of substrate materials and doping elements in the metal film may be used to provide a variety of device types.