发明名称 |
Semiconductor device having a power transistor structure |
摘要 |
A semiconductor device including a reduced surface field strength type LDMOS transistor which can prevent the breakdown of elements at channel formation portions when a reverse voltage is applied to its drain. A P well and an N well are formed in an N-type substrate to produce a double-well structure, with a source electrode being set to be equal in electric potential to the N-type substrate. The drift region of the N well has a dopant concentration to satisfy the so-called RESURF condition, which can provide a high breakdown voltage a low ON resistance. When a reverse voltage is applied to a drain electrode, a parasitic bipolar transistor comprising the N well, the P well and the N-type substrate develops to form a current-carrying path toward a substrate, so that the element breakdown at the channel formation portions is avoidable at the application of the reverse voltage. <IMAGE> |
申请公布号 |
EP0802567(A2) |
申请公布日期 |
1997.10.22 |
申请号 |
EP19970106103 |
申请日期 |
1997.04.14 |
申请人 |
DENSO CORPORATION |
发明人 |
KITAMURA, YASUHIRO;SAKAKIBARA, TOSHIO;KOHNO, KENJI;MIZUNO, SHOJI;NAKAYAMA, YOSHIAKI;MAEDA, HIROSHI;IIDA, MAKIO;FUJIMOTO, HIROSHI;SAITOU, MITSUHIRO;IMAI, HIROSHI;BAN, HIROYUKI |
分类号 |
H01L21/8249;H01L27/02;H01L27/06;H01L27/085;H01L29/06;H01L29/78 |
主分类号 |
H01L21/8249 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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