Process for reducing the carrier charge concentration for lowering the storage charge in semiconductor devices through two implantation steps

摘要

Reducing the storage carrier charge in semiconductor elements having a semiconductor body comprises implanting ions into a partial region of the semiconductor body. The process steps comprise: (a) implanting ions into the surface of the semiconductor body (1) of 1st conductivity type by a first implantation using a dose which forms a dopant of second conductivity type; (b) diffusing the dopant up to a required depth; and (c) implanting the same ions into the same surface using a second implantation using a second dose higher than the first dose.