发明名称 MANUFACTURE OF SURFACE ACOUSTIC WAVE ELEMENT
摘要 PROBLEM TO BE SOLVED: To provide a method for manufacturing a surface acoustic wave element having a very thin IDT in the sub micron order with an excellent reproducibility and with a comparatively simple process without the use of a large scale equipment or installation. SOLUTION: At least a rough electrode pattern 2 and a feeder wiring pattern 3 among electrode patterns required for the surface acoustic wave element except electrode fingers of an IDT are formed by the vapor-deposition film forming and the photolithography technology and conductor regions 40 for the patterns and the remaining electrode patterns including the electrode fingers are formed by emission of a converged ion beam B and a metallic film is depositted on the conductor regions 40 by the plating method. Thus, the surface acoustic wave element with a very thin IDT is manufactured with a high throughput and excellent reproduciblity.
申请公布号 JPH09275324(A) 申请公布日期 1997.10.21
申请号 JP19960083789 申请日期 1996.04.05
申请人 SHIMADZU CORP;ROHM CO LTD 发明人 UEDA MASAHIRO;NAGAMACHI SHINJI;NAMITA TOSHIHIRO;TOTANI KAZUYUKI
分类号 H01L41/09;H01L41/22;H03H3/08 主分类号 H01L41/09
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