发明名称 |
MANUFACTURE OF SURFACE ACOUSTIC WAVE ELEMENT |
摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a surface acoustic wave element having a very thin IDT in the sub micron order with an excellent reproducibility and with a comparatively simple process without the use of a large scale equipment or installation. SOLUTION: At least a rough electrode pattern 2 and a feeder wiring pattern 3 among electrode patterns required for the surface acoustic wave element except electrode fingers of an IDT are formed by the vapor-deposition film forming and the photolithography technology and conductor regions 40 for the patterns and the remaining electrode patterns including the electrode fingers are formed by emission of a converged ion beam B and a metallic film is depositted on the conductor regions 40 by the plating method. Thus, the surface acoustic wave element with a very thin IDT is manufactured with a high throughput and excellent reproduciblity. |
申请公布号 |
JPH09275324(A) |
申请公布日期 |
1997.10.21 |
申请号 |
JP19960083789 |
申请日期 |
1996.04.05 |
申请人 |
SHIMADZU CORP;ROHM CO LTD |
发明人 |
UEDA MASAHIRO;NAGAMACHI SHINJI;NAMITA TOSHIHIRO;TOTANI KAZUYUKI |
分类号 |
H01L41/09;H01L41/22;H03H3/08 |
主分类号 |
H01L41/09 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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