| 摘要 |
PROBLEM TO BE SOLVED: To enhance a spin valve film in resistance variation a method wherein a ferromagnetic layer where an exchange coupling magnetic field generated by an anti-ferromagnetic layer is applied is made of Co, and the Co ferromagnetic layer is saturated with an exchange coupling magnetic field generated by an adjacent anti-ferromagnetic layer. SOLUTION: A Co free layer 12, a Cu non-magnetic layer 13, a Co pin layer 14, an Ni-Mn ferromagnetic layer 15, and a Ta protective layer 16 are successively deposited on a Ta ground layer 11 into a multilayered film. This specimen is formed through an ion beam sputtering device, and the multilayered film is formed as a static magnetic field is applied to a substrate. The multitayered film specimen is thermally treated in a magnetic field for three hours at 290 deg.C to turn Ni-Mn to antiferromagneticθNi-Mn. An exchange coupling magnetic field is generated by Ni-Mn in the same direction wit,]n a magnetic field applied during a thermal treatment. At this point, an exchange coupling magnetic field of 25kA/m or above is impressed to saturate the Co pin layer 14. In result, a spin valve film of this constitution can be enhanced in resistance variation.
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