| 摘要 |
A manufacturing process for a CMOS cell with a buried contact uses highly selective etching techniques in combination with a thin oxide etching stop to prevent damage to the buried contact during the etching process. A cavity is formed in the oxide layer between the buried contact and its adjacent interconnect polysilicon element. A self-aligning silicide process (salicide) is used to coat the interconnect polysilicon, the cavity, and the buried contact, to form a continuous electrical connection between the interconnect polysilicon and the buried contact.
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