发明名称 |
Integrated heterostructures of Group III-V nitride semiconductor materials including epitaxial ohmic contact, non-nitride buffer layer and methods of fabricating same |
摘要 |
An n-on-p integrated heterostructure device of Group III-V nitride compound semiconductor materials is formed on a substrate of p-type monocrystalline silicon carbide and includes a buffer layer of p-type aluminum nitride or p-type aluminum gallium nitride on the substrate. The n-on-p integrated heterostructure includes continuously graded layers of aluminum gallium nitride to reduce or eliminate conduction band or valence band offsets. A multiple quantum well may also be used instead of the continuously graded layer. The n-on-p integrated heterostructure device may include lasers, LEDs and other devices. A p-type negative electron affinity (NEA) photoelectron emitter device may also be provided, including a p-type monocrystalline silicon carbide substrate, a layer of p-type aluminum nitride or aluminum gallium nitride, a continuously graded layer of aluminum gallium nitride and a layer of p-type aluminum gallium nitride. A surface enhancement layer may be located on the layer of aluminum gallium nitride. A multiple quantum well may be used instead of the continuously graded layer of aluminum gallium nitride. An ultraviolet-sensitive NEA device may thereby be provided.
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申请公布号 |
US5679965(A) |
申请公布日期 |
1997.10.21 |
申请号 |
US19950555604 |
申请日期 |
1995.11.09 |
申请人 |
NORTH CAROLINA STATE UNIVERSITY |
发明人 |
SCHETZINA, JAN FREDERICK |
分类号 |
H01L29/20;H01L29/205;H01L29/267;H01L33/00;H01L33/32;H01L33/40;H01S5/183;H01S5/323;(IPC1-7):H01L33/00;H01L29/861;H01L29/88 |
主分类号 |
H01L29/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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