发明名称 |
Method of making an oxide superconducting thin film |
摘要 |
A method of making a superconducting thin film of a Y-Ba-Cu-O series material by using a diode parallel plate type sputtering apparatus including a vacuum chamber, a substrate disposed within the vacuum chamber and having a substantially flat surface on which the superconducting thin film is to be formed, and a plate-shaped target functioning as a cathode and disposed within the vacuum chamber to parallelly face to the flat surface of the substrate, the target being made of the same material as the superconducting thin film, a plasma gas being introduced into the vacuum chamber, and a voltage being applied between the cathode and the substrate, wherein the method comprises the steps of applying a high frequency voltage having a frequency higher than 40 MHz between the cathode and the substrate to generate plasma of the introduced gas, superimposing a DC voltage (V) on the high frequency voltage in a polarity that the cathode becomes negative, and setting the DC voltage at a value where the DC voltage is substantially unchanged with variation of a cathode current flowing through the target when adjusting the DC voltage and controlling a value of the DC current while maintaining the DC voltage substantially at the set value.
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申请公布号 |
US5679625(A) |
申请公布日期 |
1997.10.21 |
申请号 |
US19950563905 |
申请日期 |
1995.11.22 |
申请人 |
NIPPON STEEL CORPORATION;INTERNATIONAL SUPERCONDUCTIVITY TECHNOLOGY CENTER;MITSUBISH ELECTRIC CORPORATION;HOKKAIDO ELECTRIC POWER CO., INC. |
发明人 |
ITO, WATARU;MORISHITA, TADATAKA;HOMMA, NORIO;YOSHIDA, YUKIHISA |
分类号 |
C01G1/00;C01G3/00;C23C14/08;C23C14/35;C23C14/46;C30B29/22;H01L39/24;(IPC1-7):C23C14/34 |
主分类号 |
C01G1/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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