| 摘要 |
PROBLEM TO BE SOLVED: To provide a package structure of a flat type IGBT(insulated gate type bipolar transistor) having a high power cycle durability. SOLUTION: A package 10 houses a plurality of IGTB chips 1, each accurately positioned by positioning guides 2, together with associated emitter contact terminals 3 made of Mo or other material having a thermal expansion coefficient near that of Si, and thermal interference plates 8 made of Mo, W or the like having a thermal expansion coefficient near that of Si are inserted between the contact terminal 3 and Cu-made upper common electrode plate 4. The collector side of the chip 1 is fixed with solder to a collector board 6 contacted with a Cu-made lower common electrode plate 5. The upper and lower common electrode plates 4, 5 are fixed to a ceramic insulation tube 7 to form the package 10. |
