Method of forming GaAs/AlGaAs hetero-structure and GaAs/AlGaAs hetero-structure obtained by the method

摘要

A method of forming GaAs/AlGaAs hetero-structure. The method includes the steps of preparing a GaAs substrate having a (411)A-oriented surface and setting the GaAs substrate inside a growth container with the (411)A surface being disposed as a surface to be deposited. The pressure inside the growth chamber is reduced and the GaAs substrate is heated up to a predetermined temperature to cause epitaxial growth of Ga, Al, As on the (411)A substrate and forming a GaAs/AlGaAs hetero-structure on the (411)A-oriented GaAs substrate.