Gunn transceiver logic input circuit for use in a semiconductor memory device

摘要

A gunn transceiver logic input circuit for use in a semiconductor memory device is capable of effectively inputting a signal having a small voltage difference. The gunn transceiver logic input circuit includes first and second input units which respectively input a GTL-level input signal and a GTL-level reference signal. First and second generating units with first and second level shifters respectively shift the GTL-level input signal and GTL-level reference signal to the ECL-level. An ECL buffer circuit compares the voltages between the ECL-level input signal and the ECL-level reference signal and generates first and second ECL-level output signals while maintaining a swing width of the GTL level signal.