| 摘要 |
PROBLEM TO BE SOLVED: To reduce the aspectratio of a contact hole, and facilitate processes of the flattening of a substratum, the forming of a contact hole and the burying of a contact hole, by connecting an electrode part with a conducting part by using a connection part buried in a second interlayer insulating film. SOLUTION: Since a wiring part 4a is formed on a first interlayer insulating film 3, step-difference on a second insulating film 8 can be reduced when the second interlayer insulating film 8 is formed. A storage contact plug 7 for connecting a capacitor lower part electrode 4 with a semiconductor substrate 1 can be formed simultaneously to a storage contact plug 7 for connecting the wirnig part 4a with the semiconductor substrate 1, so that manufacturing process can be reduced. By forming the wiring part 4a, the depth of the contact hole can be remarkably reduced, so that the working of contact is facilitated and burying also easily enabled. |
