发明名称 |
Exposure mask, exposure mask substrate, method for fabricating the same, and method for forming pattern based on exposure mask |
摘要 |
An exposure mask having an excellent alignment accuracy between patterns, which is prepared by first forming on a light transmissive substrate a light shielding film or a semi-transparent film pattern (first pattern) somewhat larger than a desired dimension, forming thereon a semi-transparent film or a light transmissive film pattern (second pattern) so as to include all patterns of the desired dimensions made up of a light shielding part, a semi-transparent part and a light transmissive part, and then removing a projected part of the first pattern with use of the second pattern as a mask. The semi-transparent film is formed of at least two layers each of which contains a common element, thus the semi-transparent film can be made with use of the same apparatus and when patterning, etching process can be carried out with use of the same etchant. Further, since in a mask including the semi-transparent pattern, at least that area of a non-pattern zone where light reaches a wafer through the transfer, acts to shield the exposure light, too narrowed pattern or insufficient focal depth can be prevented.
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申请公布号 |
US5679484(A) |
申请公布日期 |
1997.10.21 |
申请号 |
US19960757957 |
申请日期 |
1996.11.25 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
ITO, SHINICHI;OKANO, HARUO;WATANABE, TORU;OKUMURA, KATSUYA |
分类号 |
G03F1/00;G03F1/14;(IPC1-7):G03F9/00 |
主分类号 |
G03F1/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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