| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a multilevel semiconductor memory device provided with a MOS type mask ROM by a method wherein a channel region is divided into a plurality of parts in self-aligned manner. SOLUTION: A polysilicon film 3 and a WSi film 4 are formed via a gate insulation film 2 on a silicon substrate 1. Next, by using an anisotropic etching method, the WSi film 4 is etched in a specific shape. Next, a silicon oxide film 5 is formed on the entire face, and by using the anisotropic etching method, a sidewall is formed. Next, by use of the WSi film 4 and the sidewall as a mask, by using the anisotropic etching method, the polysilicon film 3 is etched to form a projected gate electrode. Next, ions are implanted aslant from a specific implantation angle from the perpendicular direction with respect to the gate electrode. |
