| 摘要 |
PROBLEM TO BE SOLVED: To produce a semiconductor memory device which has counter electrodes easily buried in gaps between double-cylindershaped memory node electrodes, high memory cell capacity and high degree of integration. SOLUTION: Side walls composed of a polycrystalline Si film 32 are formed in recesses 16a with leaving a SiO2 film 31 deposited. This facilitates burying counter electrodes in gaps between double-cylinder-shaped memory node electrodes composed of the film 17 and polycrystalline Si films 32, 33 and suppresses voids from being formed in the counter electrodes. Thus, it is possible to utilize the entire surface area of the memory node electrode as an effective electrode area. |
