发明名称 THIN FILM WIRING STRUCTURE
摘要 <p>PROBLEM TO BE SOLVED: To prevent exfoliation which is the bottleneck of multilayered wiring, by forming a plurality of protrusions on the bonding surface to insulator. SOLUTION: Cu wiring 12 is formed in polyimide 1 on an Si substrate 2, and connects LSI chips 4. Many cylindrical protrusions 13 are formed on the Si substrate 2. The manufacturing method is as follows; photosensitive resist is spread on the Si substrate 2 and baked, a circular pattern resist is developed by photolithography, and a lot of the protrusions are formed by etching the Si substrate 2. Thereby, spin-coated polyimide 1 is sufficiently stuck around the protrusions 13 of the Si substrate 2, and the bonding area is increased, so that the bonding strength is increased. Since the coefficient of linear expansion of the polyimide 1 is large as compared with that of the Si substrate 2, the protrusions 13 are fastened by the polyimide 1 as the result of thermal contraction of the polyimide 1 caused by cooling, and compressive force is generated on the surfaces of the protrusions 13, so that the bonding strength of the polyimide 1 and the protrusions 13 is further increased.</p>
申请公布号 JPH09275159(A) 申请公布日期 1997.10.21
申请号 JP19960081210 申请日期 1996.04.03
申请人 HITACHI LTD 发明人 DOI HIROAKI;MINAMITANI RINTARO;YASUKAWA AKIO;YAMASHITA KIICHI
分类号 H01L23/12;H01L23/538;(IPC1-7):H01L23/12 主分类号 H01L23/12
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