| 摘要 |
PROBLEM TO BE SOLVED: To ensure excellent connecting property, by electrically connecting an electrode part of a circuit wiring of copper or copper alloy and a wiring part of a circuit board or a terminal of a lead frame, by using a thin wire composed of silver having purity higher than or equal to a specified value and a stud bump. SOLUTION: Siver alloy is melted and casted in a high frequency vacuum melting furnace by adding a specified amount of matrix alloy of addition element for alloying to electrolytic silver whose silver purity is equal to or higher than about 99.9wt.%. After an ingot is rolled, wire drawing work is performed at a normal temperature, and a silver alloy thin wire is obtained. An electrode part of a circuit wiring part of copper or copper alloy which is formed on a semiconductor element and a wiring part of a circuit board on which an element is mounted or a terminal of a lead frame are electrically connected by using a silver alloy thin wire and a stud bump. Thereby a semiconductor device having high connection reliability can be obtained. |
