| 摘要 |
A method of maintaining a strong endpoint detection signal, for RIE processes, has bean developed. After numerous RIE procedures have been performed, in a specific RIE chamber, an insitu dry cleaning procedure is implemented to remove polymer from a window in the RIE tool, a window that is used for monitoring endpoint. The insitu dry cleaning procedure is performed using oxygen or chlorine, in the etching chamber of a single wafer RIE tool, while wafers, waiting to be etched, reside in a different chamber of the single wafer RIE tool. The ability to insitu dry clean, results in little interruption in the utilization of the etching function of this tool.
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