EPITIAL GROWTH

摘要

A forming method of epitaxial layers having a fine line-width and a thickness of atomic layer without using an etching process. The method comprises the steps of: forming a molecular layer(20) containing a first atom and a second atom on a semiconductor substrate(10); decomposing the molecular layer(20) into the first and second atom; and performing adsorption the decomposed first atom made of silicon atom on the surface of the substrate(10) after removing the decomposed second atom. Thereby, it is possible to control the thickness and the line-width of the epitaxial layer to atomic unit.