FORMING METHOD OF INTERLAYER INSULATING FILMS IN THE SEMICONDUCTOR DEVICE

摘要

The method is for forming an inter metal layer insulating film of a semiconductor device capable of increasing the role of a barrier against the H+ ion penetration and of enhancing the quality of an upper metal layer and a passivation film. The method is characterized by comprising the step of implanting a hydrogen ion into a second IMO(7) after forming a first IMO(5), a SOG film(6) and the second IMO(7) on a bottom metal layer in sequence.