发明名称 Electron lithography process and apparatus
摘要 <p>Projection lithographic systems relying on radiant energy such as electrons and ion beams are substantially affected by the distance between the projection mask (1) and the substrate (9). In particular, to avoid undesirable limitation of the obtainable resolution, this distance should be a meter or less.</p>
申请公布号 EP0602833(B1) 申请公布日期 1997.10.15
申请号 EP19930309628 申请日期 1993.12.02
申请人 AT&T CORP. 发明人 BERGER, STEVEN DAVID
分类号 G03F7/20;H01J37/317;H01L21/027;(IPC1-7):H01J37/317 主分类号 G03F7/20
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