发明名称 Semiconductor integrated circuit device comprising a dielectric isolation structure.
摘要 A semiconductor integrated circuit has a multilayered supporter (2, 22, 23) and one or more semiconductor islands (1) being disposed on the supporter (2, 22, 23) and being insulated against it by an insulating film (21). Within the islands (1), circuit elements are formed. The circuit further comprises an auxiliary electrode (33) provided at the supporter (2, 22, 23). <IMAGE>
申请公布号 EP0596414(A3) 申请公布日期 1997.10.15
申请号 EP19930117515 申请日期 1993.10.28
申请人 HITACHI, LTD. 发明人 SAKURAI, NAOKI;SUGAWARA, YOSHITAKA
分类号 H01L21/762;H01L27/06;H01L29/06;H01L29/10;H01L29/40;H01L29/78;H01L29/861;H02P6/08 主分类号 H01L21/762
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