Data storage device and method of data processing

摘要

The phase changeable layer (31) is sufficiently thick that impinging vitrifying energy pulses do not vitrify all the way through it. The substrate (11) supports a first encapsulating dielectric layer (21), e.g. of germanium oxide, the chalcogenide data storage medium layer (31), a second dielectric layer (25), e.g. of germanium oxide and a second substrate (51). A projected beam can change a discrete portion of the medium from a solid state of first relative order to a solid state of second relative order through an intermediate state of relatively high mobility. Projected beam energy can also be applied to reverse the process.