| 摘要 |
The invention concerns a superconducting component with two step-shaped levels separated from one another. A layer with superconducting properties is provided on each of the two step surfaces. The superconducting layers consist in particular of niobium. The two superconducting layers are coupled electrically via the step flank, specifically, in the form of a weak link connection. The step flank consists substantially of p-doped semiconductor material, in particular of p<->-doped indium arsenide. As a result of the p-doped layer, an inversion depletion layer is formed on the flank and electrical conduction takes place within it. At at least one of the two level-flank junctions, means are provided for improving electron transport, suitable means being an n<+>-doped region of semiconductor material. To that end, the region in question borders at least one of the two surface-flank junctions. |
