| 发明名称 |
PREPARATION OF LIQUID PHASE EPITAXIAL GROWTH LAYER |
| 摘要 |
PURPOSE:To mass-produce liquid phase epitaxial growth layers by rotating relatively a base for supporting a substrate and a vessel for supporting the supply solution which is opened at its bottom and is divided into radial chambers through partitions. |
| 申请公布号 |
JPS52113155(A) |
申请公布日期 |
1977.09.22 |
| 申请号 |
JP19760025264 |
申请日期 |
1976.03.08 |
| 申请人 |
SUMITOMO ELECTRIC INDUSTRIES |
发明人 |
AKAI SHINICHI;IGUCHI SHINICHI |
| 分类号 |
C30B19/00;H01L21/208;H01L21/302;H01L33/28;H01L33/30 |
主分类号 |
C30B19/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
