| 摘要 |
There are disclosed a semiconductor memory device and a method for fabrication thereof. The semiconductor memory device comprises a storage electrode connected with a source region of a MOSFET and formed with a wider area than that of the mask therefor, having a structure which is comprised of a spacer-shaped hollow cylinder of impurity-doped polysilicon containing three separate solid cylinders of impurity-doped polysilicon therein, a column filling the contact hole, and a disc-like plate, the spacer-shaped hollow cylinder and the three separate cylinders standing on the disc-like plate from which the column is extended toward the active region. It has an advantage of increasing the efficient area of a storage electrode of a semiconductor device, thereby improving the capacitance. In addition, it becomes more reliable and thus, its price increases. |
