| 摘要 |
PURPOSE:To eliminate the narrow parts of a pattern width at the base of an opening having a width of submicrons to be connected to an opening having a large width by exposing a positive type resist layer with a mask having a light transmission pattern provided with a tapered part expanding from the light transmission unit side having a small width toward the other light transmission unit side having a large width. CONSTITUTION:When an opening pattern connecting a first opening 8 having a width less than 1mum with a second opening 9 having a larger width than that of the first opening 8 is formed in a positive type resist layer 7, the layer 7 is exposed with a photomask 1 having a light transmission pattern formed with a tapered part 5 expanding from a first light transmission unit 3 toward a second light transmission unit 4 at a connector connecting the unit 3 having a narrow width corresponding to the opening 8 to the unit 4 having a wider width corresponding to the opening 9. Thus, a reduction in the energy amount of the light for exposing the submicron width stripelike opening region 8 due to the interference of reflected light from te exposure region having wide width is substantially eliminated, and the width of the region 8 formed on the resist becomes the value substantially as specified. |
