发明名称 Method of manufacturing an X-ray exposure mask and device for controlling the internal stress of thin films
摘要 <p>An X-ray mask can be manufactured by forming an X-ray transmitting thin film (12) on a mask support (11), forming an X-ray absorber thin film (14) on the X-ray transmitting thin film (12), and patterning the X-ray absorber thin film (14) with a desired pattern to form an X-ray absorber pattern. Prior to the patterning, at least one inert element with an atomic number greater than that of neon is ion-implanted in the X-ray absorber thin film (14).</p>
申请公布号 EP0389198(B1) 申请公布日期 1997.10.15
申请号 EP19900302859 申请日期 1990.03.16
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 HORI, MASARU;ITOH, MASAMITSU
分类号 B81B3/00;B81C1/00;G03F1/22;G03F1/68;G03F1/80;H01L21/027;H01L21/30;(IPC1-7):G03F1/14 主分类号 B81B3/00
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