发明名称 |
Method of manufacturing an X-ray exposure mask and device for controlling the internal stress of thin films |
摘要 |
<p>An X-ray mask can be manufactured by forming an X-ray transmitting thin film (12) on a mask support (11), forming an X-ray absorber thin film (14) on the X-ray transmitting thin film (12), and patterning the X-ray absorber thin film (14) with a desired pattern to form an X-ray absorber pattern. Prior to the patterning, at least one inert element with an atomic number greater than that of neon is ion-implanted in the X-ray absorber thin film (14).</p> |
申请公布号 |
EP0389198(B1) |
申请公布日期 |
1997.10.15 |
申请号 |
EP19900302859 |
申请日期 |
1990.03.16 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
HORI, MASARU;ITOH, MASAMITSU |
分类号 |
B81B3/00;B81C1/00;G03F1/22;G03F1/68;G03F1/80;H01L21/027;H01L21/30;(IPC1-7):G03F1/14 |
主分类号 |
B81B3/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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