| 摘要 |
A resist pattern is formed on a substrate by forming a water-soluble resist film on the substrate, forming a contrast enhancing film on the resist film from a contrast enhancing composition comprising a specific arylnitrone compound of formula (1), pre-baking the resist film before or after formation of the contrast enhancing film, exposing the resist film to light through the contrast enhancing film, baking the films after exposure, removing the contrast enhancing film after the baking step, and developing the resist film. The process forms a resist pattern having a fully rectangular profile and an improved focus margin. The conventional apparatus can be utilized without substantial modification, achieving a cost reduction. <IMAGE> (1) wherein R1, R2, and R3 are independently an alkyl radical, an aryl radical or a hydrogen atom, R4 to R8 are independently an alkyl radical, a hydrogen atom or a carboxyl radical, at least one of R4 to R8 being a carboxyl radical, X is a hydrogen atom, an alkoxy radical represented by R9O-, or a dialkylamino radical represented by R10R11N- wherein R9 is an alkyl radical, R10 and R11 are independently an alkyl radical, and letter n ha a value of 0, 1 or 2. |
