| 摘要 |
PURPOSE:To improve a heat dissipation effect and to obtain a high-output semiconductor device by a method wherein a metal layer is provided on the surface of a ceramic substrate having a heat dissipation fin, a semiconductor chip is mounted on this layer end after electrodes are formed, the surface is covered using a resin. CONSTITUTION:A conductor pattern 4 consisting of a drain electrode 4a, a gate electrode 4b and a source electrode 4c is formed on the surface on the side opposite to a heat dissipation fin of a ceramic substrate 1 with the heat dissipation fin. Then, a semiconductor chip 2 is closely adhered on the electrode 4a of the pattern 4, a source part 2c of the chip 2 and the electrode 4c are connected to each other by a lead plate 7 and a gate part 2b of the chip 2 and the electrode 4b are connected to each other by bonding wires 8. Moreover, the chip 2, the lead plate 7 and the wires 8 are completely covered with a covering resin 5. Thereby, heat to generate from the chip is favorably dissipated through the ceramic substrate and the ceramic heat dissipation fin and a small- sized and high-output semiconductor device is obtained. |
