| 摘要 |
PURPOSE:To increase the output current of an element by forming an infrared/ visible light conversion layer which converts infrared light into visible light and outputs it to effectively utilize the light of a long wavelength of 800nm or longer for photoelectric conversion. CONSTITUTION:A photovoltaic element having a light transmissible photodetecting electrode, a semiconductor layer and a rear surface electrode has an infrared light/visible light conversion layer 17 which converts infrared/ light into visible light and outputs it. When light is incident through a substrate 11 and a photodetecting electrode 12 to semiconductor layers 13-15, the visible light components of wavelength range of 400-800nm of the incident light are absorbed to the layers 13-15, the infrared light components of long wavelength of 800nm or longer are transmitted through the layers 13-15 and a conductive film 15 to be incident to the layer 17 to be converted to the visible light, the visible light output from the layer 17 is absorbed by the layer 13-15 to effectively contribute to the generation of electron-hole pairs to be utilized for photoelectric conversion, thereby increasing the output current of the element. |
