发明名称 |
Method of forming multi-layer interconnection |
摘要 |
A method of forming a multi-layer interconnection is provided by which a resist pattern can be precisely formed by maintaining a uniform resist pattern film thickness and such problems as reduced electric resistance of a connecting portion and defective connection between a first interconnection layer and a second interconnection layer will not occur by ensuring a sufficient diameter of a contact hole. The method includes the steps of: removing a portion of an insulating layer having a main surface and covering a first conductive layer to form a hole reaching the first conductive layer in the insulating layer; forming an organic layer at least filling the hole; removing a portion of the insulating layer at a portion at which the insulating layer contacts an organic layer filling the hole; removing the organic layer filling the hole to form a recessed portion continuous to the hole in the insulating layer; and forming a second conductive layer in such a manner that it fills the hole and the recessed portion.
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申请公布号 |
US5677243(A) |
申请公布日期 |
1997.10.14 |
申请号 |
US19960614579 |
申请日期 |
1996.03.13 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
OHSAKI, AKIHIKO |
分类号 |
H01L21/302;H01L21/3065;H01L21/3205;H01L21/3213;H01L21/768;(IPC1-7):H01L21/44 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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